2.7A (Ta),Current - Continuous Drain (Id) @ 25°C
6-WDFN Exposed Pad,Package / Case
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTLJS4149PTAG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 62 mOhm @ 2A, 4.5V 1V @ 250µA 15nC @ 4.5V 960pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad
NTLJS4149PTBG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.7A (Ta) 62 mOhm @ 4.5A, 4.5V 1V @ 250µA 15nC @ 4.5V 960pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad