2.6A,Current - Continuous Drain (Id) @ 25°C
-,Input Capacitance (Ciss) @ Vds
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2302CDS-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 2.6A 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 710mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI7956DP-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 150V 2.6A 105 mOhm @ 4.1A, 10V 4V @ 250µA 26nC @ 10V - 1.4W Surface Mount PowerPAK® SO-8 Dual
SI7956DP-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 150V 2.6A 105 mOhm @ 4.1A, 10V 4V @ 250µA 26nC @ 10V - 1.4W Surface Mount PowerPAK® SO-8 Dual