HUFA75307T3ST |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
55V
|
2.6A
|
90 mOhm @ 2.6A, 10V
|
4V @ 250µA
|
17nC @ 20V
|
250pF @ 25V
|
1.1W
|
Surface Mount
|
TO-261-4, TO-261AA
|
FDME1023PZT |
FAIRCHILD SEMICONDUCTOR CORP |
|
2 P-Channel (Dual)
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20V
|
2.6A
|
142 mOhm @ 2.3A, 4.5V
|
1V @ 250µA
|
7.7nC @ 4.5V
|
405pF @ 10V
|
600mW
|
Surface Mount
|
6-WDFN Exposed Pad
|
BSO615N G |
INFINEON TECHNOLOGIES AG |
|
2 N-Channel (Dual)
|
60V
|
2.6A
|
150 mOhm @ 2.6A, 4.5V
|
2V @ 20µA
|
20nC @ 10V
|
380pF @ 25V
|
2W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
BSO615N |
INFINEON TECHNOLOGIES AG |
|
2 N-Channel (Dual)
|
60V
|
2.6A
|
150 mOhm @ 2.6A, 4.5V
|
2V @ 20µA
|
20nC @ 10V
|
380pF @ 25V
|
2W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
BUK98150-55,135 |
NXP SEMICONDUCTORS |
|
MOSFET N-Channel, Metal Oxide
|
55V
|
2.6A
|
150 mOhm @ 5A, 5V
|
2V @ 1mA
|
-
|
330pF @ 25V
|
1.8W
|
Surface Mount
|
TO-261-4, TO-261AA
|
SI2302CDS-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
2.6A
|
57 mOhm @ 3.6A, 4.5V
|
850mV @ 250µA
|
5.5nC @ 4.5V
|
-
|
710mW
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|
SI2304BDS-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
2.6A
|
70 mOhm @ 2.5A, 10V
|
3V @ 250µA
|
4nC @ 5V
|
225pF @ 15V
|
750mW
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|
SI7956DP-T1-GE3 |
VISHAY SILICONIX |
|
2 N-Channel (Dual)
|
150V
|
2.6A
|
105 mOhm @ 4.1A, 10V
|
4V @ 250µA
|
26nC @ 10V
|
-
|
1.4W
|
Surface Mount
|
PowerPAK® SO-8 Dual
|
SIB911DK-T1-GE3 |
VISHAY SILICONIX |
|
2 P-Channel (Dual)
|
20V
|
2.6A
|
295 mOhm @ 1.5A, 4.5V
|
1V @ 250µA
|
4nC @ 8V
|
115pF @ 10V
|
3.1W
|
Surface Mount
|
PowerPAK® SC-75-6L Dual
|
SI7956DP-T1-E3 |
VISHAY SILICONIX |
|
2 N-Channel (Dual)
|
150V
|
2.6A
|
105 mOhm @ 4.1A, 10V
|
4V @ 250µA
|
26nC @ 10V
|
-
|
1.4W
|
Surface Mount
|
PowerPAK® SO-8 Dual
|