2.3A (Ta), 8.9A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI7115DN-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 150V 2.3A (Ta), 8.9A (Tc) 295 mOhm @ 4A, 10V 4V @ 250µA 42nC @ 10V 1190pF @ 50V 52W Surface Mount PowerPAK® 1212-8
SI7115DN-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 150V 2.3A (Ta), 8.9A (Tc) 295 mOhm @ 4A, 10V 4V @ 250µA 42nC @ 10V 1190pF @ 50V 52W Surface Mount PowerPAK® 1212-8