| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AO3422 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 55V | 2.1A (Ta) | 160 mOhm @ 2.1A, 4.5V | 2V @ 250µA | 3.3nC @ 4.5V | 300pF @ 25V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| ZVN4306GVTA | DIODES INC | MOSFET N-Channel, Metal Oxide | 60V | 2.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 3W | Surface Mount | TO-261-4, TO-261AA | |
| ZXMN2B01FTA | DIODES INC | MOSFET N-Channel, Metal Oxide | 20V | 2.1A (Ta) | 100 mOhm @ 2.4A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 370pF @ 10V | 625mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| DMP6250SE-13 | DIODES INC | MOSFET P-Channel, Metal Oxide | 60V | 2.1A (Ta) | 250 mOhm @ 1A, 10V | 3V @ 250µA | 9.7nC @ 10V | 551pF @ 30V | 1.8W | Surface Mount | TO-261-4, TO-261AA | |
| ZVN4306GTA | DIODES INC | MOSFET N-Channel, Metal Oxide | 60V | 2.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 3W | Surface Mount | TO-261-4, TO-261AA | |
| ZVN4306GTC | DIODES INC | MOSFET N-Channel, Metal Oxide | 60V | 2.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 3W | Surface Mount | TO-261-4, TO-261AA | |
| ZVN4306GVTC | DIODES INC | MOSFET N-Channel, Metal Oxide | 60V | 2.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 3W | Surface Mount | TO-261-4, TO-261AA | |
| FDC3535 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 80V | 2.1A (Ta) | 183 mOhm @ 2.1A, 10V | 3V @ 250µA | 20nC @ 10V | 880pF @ 40V | 700mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| CSD13381F4 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 12V | 2.1A (Ta) | 180 mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 1.4nC @ 4.5V | 200pF @ 6V | 500mW | Surface Mount | 3-XFDFN | |
| SI4434DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 250V | 2.1A (Ta) | 155 mOhm @ 3A, 10V | 4V @ 250µA | 50nC @ 10V | - | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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