19.8A (Ta), 60A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SIE816DF-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 19.8A (Ta), 60A (Tc) 7.4 mOhm @ 19.8A, 10V 4.4V @ 250µA 77nC @ 10V 3100pF @ 30V 125W Surface Mount 10-PolarPAK® (L)
SIE816DF-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 19.8A (Ta), 60A (Tc) 7.4 mOhm @ 19.8A, 10V 4.4V @ 250µA 77nC @ 10V 3100pF @ 30V 125W Surface Mount 10-PolarPAK® (L)