| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STL24N60M2 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 600V | 18A (Tc) | 210 Ohm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | 125W | Surface Mount | - | |
| JAN2N7236U | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 18A (Tc) | 220 mOhm @ 18A, 10V | 4V @ 250µA | 60nC @ 10V | - | 125W | - | - | |
| JANTX2N7236U | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 18A (Tc) | 220 mOhm @ 18A, 10V | 4V @ 250µA | 60nC @ 10V | - | 125W | - | - | |
| JANTXV2N7236U | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 18A (Tc) | 220 mOhm @ 18A, 10V | 4V @ 250µA | 60nC @ 10V | - | 125W | - | - | |
| IRF640 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 200V | 18A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 250µA | 72nC @ 10V | 1560pF @ 25V | 125W | Through Hole | TO-220-3 | |
| IRC640PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 125W | Through Hole | TO-220-5 | |
| IRF640PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 125W | Through Hole | TO-220-3 |
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