18A (Tc),Current - Continuous Drain (Id) @ 25°C
1300pF @ 25V,Input Capacitance (Ciss) @ Vds
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF640LPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF640SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 130W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF640S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 130W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF640L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF640STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 130W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF640STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 130W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRC640PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 125W Through Hole TO-220-5
IRF640PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 125W Through Hole TO-220-3