18A (Tc),Current - Continuous Drain (Id) @ 25°C
1100pF @ 25V,Input Capacitance (Ciss) @ Vds
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQA17P10 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 120W Through Hole TO-3P-3, SC-65-3
IRF9Z34PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 88W Through Hole TO-220-3
IRF9Z34SPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34STRRPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 68W Through Hole TO-220-3
IRF9Z34S VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34STRL VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34STRR VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB