18A (Tc),Current - Continuous Drain (Id) @ 25°C
39nC @ 10V,Gate Charge (Qg) @ Vgs
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTY18P10T IXYS CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 83W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP18P10T IXYS CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 83W Through Hole TO-220-3
STD20NF20 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 90W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STP20NF20 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 90W Through Hole TO-220-3
STD25NF20 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STF20NF20 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 30W Through Hole TO-220-3 Full Pack
FQA17P10 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 120W Through Hole TO-3P-3, SC-65-3
IXTA18P10T IXYS CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 120 mOhm @ 9A, 10V 4.5V @ 250µA 39nC @ 10V 2100pF @ 25V 83W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP20N20 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 90W Through Hole TO-220-3
STD20N20T4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 90W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63