600V,Drain to Source Voltage (Vdss)
18A (Tc),Current - Continuous Drain (Id) @ 25°C
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTR32P60P IXYS CORP
MOSFET P-Channel, Metal Oxide 600V 18A (Tc) 385 mOhm @ 16A, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 310W Through Hole -
IXFH18N60P IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 400 mOhm @ 500mA, 10V 5.5V @ 2.5mA 50nC @ 10V 2500pF @ 25V 360W Through Hole TO-247-3
STL24N60M2 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 210 Ohm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 125W Surface Mount -
STI24N60M2 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 150W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
STP24N60M2 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 150W Through Hole TO-220-3
IXTQ18N60P IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 420 mOhm @ 9A, 10V 5.5V @ 250µA 49nC @ 10V 2500pF @ 25V 360W Through Hole TO-3P-3, SC-65-3
IXTV18N60P IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 420 mOhm @ 9A, 10V 5.5V @ 250µA 49nC @ 10V 2500pF @ 25V 360W Through Hole TO-220-3, Short Tab
IXFV18N60P IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 400 mOhm @ 500mA, 10V 5.5V @ 2.5mA 50nC @ 10V 2500pF @ 25V 360W Through Hole TO-220-3, Short Tab
IXTV18N60PS IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 420 mOhm @ 9A, 10V 5.5V @ 250µA 49nC @ 10V 2500pF @ 25V 360W Surface Mount PLUS-220SMD
IXFV18N60PS IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 18A (Tc) 400 mOhm @ 500mA, 10V 5.5V @ 2.5mA 50nC @ 10V 2500pF @ 25V 360W Surface Mount PLUS-220SMD