1000V (1kV),Drain to Source Voltage (Vdss)
18A (Tc),Current - Continuous Drain (Id) @ 25°C
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFT18N100Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 660 mOhm @ 9A, 10V 6.5V @ 4mA 90nC @ 10V 4890pF @ 25V 830W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH18N100Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 660 mOhm @ 9A, 10V 6.5V @ 4mA 90nC @ 10V 4890pF @ 25V 830W Through Hole TO-247-3
IXFR24N100Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 490 mOhm @ 12A, 10V 6.5V @ 4mA 140nC @ 10V 7200pF @ 25V 500W Through Hole TO-247-3
IXFR32N100P IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 340 mOhm @ 16A, 10V 6.5V @ 1mA 225nC @ 10V 14200pF @ 25V 320W Through Hole -
IXFR21N100Q IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 500 mOhm @ 10.5A, 10V 5V @ 4mA 170nC @ 10V 5900pF @ 25V 350W Through Hole -
APT18M100B MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 700 mOhm @ 9A, 10V 5V @ 1mA 150nC @ 10V 4845pF @ 25V 625W Through Hole TO-247-3