18A (Tc),Current - Continuous Drain (Id) @ 25°C
-,Package / Case
15 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTR32P60P IXYS CORP
MOSFET P-Channel, Metal Oxide 600V 18A (Tc) 385 mOhm @ 16A, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 310W Through Hole -
IXFR32N100P IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 340 mOhm @ 16A, 10V 6.5V @ 1mA 225nC @ 10V 14200pF @ 25V 320W Through Hole -
IXFR21N100Q IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 18A (Tc) 500 mOhm @ 10.5A, 10V 5V @ 4mA 170nC @ 10V 5900pF @ 25V 350W Through Hole -
IXFL30N120P IXYS CORP
MOSFET N-Channel, Metal Oxide 1200V (1.2kV) 18A (Tc) 380 mOhm @ 15A, 10V 6.5V @ 1mA 310nC @ 10V 19000pF @ 25V 357W Through Hole -
2N7236 MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 200 mOhm @ 11A, 10V 4V @ 250µA 60nC @ 10V - 4W - -
2N7236U MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 200 mOhm @ 11A, 10V 4V @ 250µA 60nC @ 10V - 4W - -
JAN2N7236 MICROSEMI CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 220 mOhm @ 18A, 10V 4V @ 250µA 60nC @ 10V - 4W - -
JANTX2N7236 MICROSEMI CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 220 mOhm @ 18A, 10V 4V @ 250µA 60nC @ 10V - 4W - -
JANTXV2N7236 MICROSEMI CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 220 mOhm @ 18A, 10V 4V @ 250µA 60nC @ 10V - 4W - -
JAN2N7236U MICROSEMI CORP
MOSFET P-Channel, Metal Oxide 100V 18A (Tc) 220 mOhm @ 18A, 10V 4V @ 250µA 60nC @ 10V - 125W - -