17.2A (Ta), 23.1A (Tc),Current - Continuous Drain (Id) @ 25°C
45nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4660DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 25V 17.2A (Ta), 23.1A (Tc) 5.8 mOhm @ 15A, 10V 2.2V @ 250µA 45nC @ 10V 2410pF @ 15V 5.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4660DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 25V 17.2A (Ta), 23.1A (Tc) 5.8 mOhm @ 15A, 10V 2.2V @ 250µA 45nC @ 10V 2410pF @ 15V 5.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)