| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD8870 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 160A | 3.9 mOhm @ 35A, 10V | 2.5V @ 250µA | 118nC @ 10V | 5160pF @ 15V | 160W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPB030N08N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 80V | 160A | 3 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 214W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| GWM160-0055P3 | IXYS CORP | 6 N-Channel (3-Phase Bridge) | 55V | 160A | 3 mOhm @ 100A, 10V | 4V @ 1mA | 90nC @ 10V | - | - | Surface Mount | - | |
| NP160N04TUK-E1-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 40V | 160A | 1.5 mOhm @ 80A, 10V | 4V @ 250µA | 189nC @ 10V | 10800pF @ 25V | 1.8W | Surface Mount | TO-264 | |
| NP160N055TUK-E1-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 55V | 160A | 2.1 mOhm @ 80A, 10V | 4V @ 250µA | 189nC @ 10V | 11250pF @ 25V | 1.8W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) |
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