| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQP16N15 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 16.4A (Tc) | 160 mOhm @ 8.2A, 10V | 4V @ 250µA | 30nC @ 10V | 910pF @ 25V | 108W | Through Hole | TO-220-3 | |
| FQB16N15TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 16.4A (Tc) | 160 mOhm @ 8.2A, 10V | 4V @ 250µA | 30nC @ 10V | 910pF @ 25V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPL60R199CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 16.4A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32nC @ 10V | 1520pF @ 100V | 139W | Surface Mount | 4-TSFN Exposed Pad |
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