| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 16.1A (Tc) | 250 mOhm @ 4.4A, 10V | 3.5V @ 400µA | 44nC @ 10V | 950pF @ 100V | 208.3W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI4401DDY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 40V | 16.1A (Tc) | 15 mOhm @ 10.2A, 10V | 2.5V @ 250µA | 95nC @ 10V | 3007pF @ 20V | 6.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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