16.1A (Ta), 21.5A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4866BDY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 16.1A (Ta), 21.5A (Tc) 5.3 mOhm @ 12A, 4.5V 1V @ 250µA 80nC @ 4.5V 5020pF @ 6V 4.45W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4866BDY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 16.1A (Ta), 21.5A (Tc) 5.3 mOhm @ 12A, 4.5V 1V @ 250µA 80nC @ 4.5V 5020pF @ 6V 4.45W Surface Mount 8-SOIC (0.154", 3.90mm Width)