| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD5614P | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 15A (Ta) | 100 mOhm @ 4.5A, 10V | 3V @ 250µA | 24nC @ 10V | 759pF @ 30V | 1.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI4404DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 15A (Ta) | 6.5 mOhm @ 23A, 10V | 3V @ 250µA | 55nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4442DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 15A (Ta) | 4.5 mOhm @ 22A, 10V | 1.5V @ 250µA | 50nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4442DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 15A (Ta) | 4.5 mOhm @ 22A, 10V | 1.5V @ 250µA | 50nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4404DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 15A (Ta) | 6.5 mOhm @ 23A, 10V | 3V @ 250µA | 55nC @ 4.5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
© 2016 Copyright
