15A (Ta),Current - Continuous Drain (Id) @ 25°C
-,Input Capacitance (Ciss) @ Vds
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRLR3410CPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 100V 15A (Ta) - - - - - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
HAF1002-90STL-E RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 60V 15A (Ta) 90 mOhm @ 7.5A, 10V - - - 50W Surface Mount SC-83
HAF1002-90STL RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 60V 15A (Ta) 90 mOhm @ 7.5A, 10V - - - 50W Surface Mount SC-83
SI7478DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 15A (Ta) 7.5 mOhm @ 20A, 10V 3V @ 250µA 160nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI4404DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 6.5 mOhm @ 23A, 10V 3V @ 250µA 55nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4442DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 4.5 mOhm @ 22A, 10V 1.5V @ 250µA 50nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4442DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 4.5 mOhm @ 22A, 10V 1.5V @ 250µA 50nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4404DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 6.5 mOhm @ 23A, 10V 3V @ 250µA 55nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI7856ADP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 3.7 mOhm @ 25A, 10V 3V @ 250µA 55nC @ 4.5V - 1.9W Surface Mount PowerPAK® SO-8
SI7856ADP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 3.7 mOhm @ 25A, 10V 3V @ 250µA 55nC @ 4.5V - 1.9W Surface Mount PowerPAK® SO-8