30V,Drain to Source Voltage (Vdss)
14A,Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDS6682 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 14A 7.5 mOhm @ 14A, 10V 3V @ 250µA 31nC @ 5V 2310pF @ 15V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRFHM831TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 14A 7.8 mOhm @ 12A, 10V 2.35V @ 25µA 16nC @ 10V 1050pF @ 25V 2.5W Surface Mount 8-PowerTDFN
IRF9395MTRPBF INTERNATIONAL RECTIFIER CORP
2 P-Channel (Dual) 30V 14A 7 mOhm @ 14A, 10V 2.4V @ 50µA 64nC @ 10V 3241pF @ 15V 2.1W Surface Mount -
UPA2736GR-E1-AT RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 14A 7 mOhm @ 14A, 10V - 80nC @ 10V 3400pF @ 10V 1.1W Surface Mount 8-PowerSOIC (0.173", 4.40mm)
UPA2716AGR-E1-AT RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 14A 7 mOhm @ 7A, 10V - 95nC @ 10V 3000pF @ 10V 2W Surface Mount 8-SOIC (0.173", 4.40mm Width)
RJK03E3DNS-00#J5 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 14A 11.6 mOhm @ 7A, 10V - 5.7nC @ 4.5V 1050pF @ 10V 10W Surface Mount 8-WDFN Exposed Pad
RJK03M9DNS-00#J5 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 14A 11.1 mOhm @ 7A, 10V - 6nC @ 4.5V 980pF @ 10V 10W Surface Mount 8-WFDFN Exposed Pad