| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZVP3310A | DIODES INC | MOSFET P-Channel, Metal Oxide | 100V | 140mA (Ta) | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 50pF @ 25V | 625mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
| ZVN0545GTA | DIODES INC | MOSFET N-Channel, Metal Oxide | 450V | 140mA (Ta) | 50 Ohm @ 100mA, 10V | 3V @ 1mA | - | 70pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| ZXMN0545G4TA | DIODES INC | MOSFET N-Channel, Metal Oxide | 450V | 140mA (Ta) | 50 Ohm @ 100mA, 10V | 3V @ 1mA | - | 70pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| ZVN0545GTC | DIODES INC | MOSFET N-Channel, Metal Oxide | 450V | 140mA (Ta) | 50 Ohm @ 100mA, 10V | 3V @ 1mA | - | 70pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| ZVP3310ASTOA | DIODES INC | MOSFET P-Channel, Metal Oxide | 100V | 140mA (Ta) | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 50pF @ 25V | 625mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| ZVP3310ASTOB | DIODES INC | MOSFET P-Channel, Metal Oxide | 100V | 140mA (Ta) | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 50pF @ 25V | 625mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| ZVP3310ASTZ | DIODES INC | MOSFET P-Channel, Metal Oxide | 100V | 140mA (Ta) | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 50pF @ 25V | 625mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| BSR92P L6327 | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 250V | 140mA (Ta) | 11 Ohm @ 140mA, 10V | 1V @ 130µA | 4.8nC @ 10V | 109pF @ 25V | 500mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI1032R-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 20V | 140mA (Ta) | 5 Ohm @ 200mA, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | 250mW | Surface Mount | SC-75A | |
| SI1031R-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 140mA (Ta) | 8 Ohm @ 150mA, 4.5V | 1.2V @ 250µA | 1.5nC @ 4.5V | - | 250mW | Surface Mount | SC-75A |
© 2016 Copyright
