| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS4080N3 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 40V | 13A (Ta) | 10.5 mOhm @ 13A, 10V | 5V @ 250µA | 40nC @ 10V | 1750pF @ 20V | 3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | |
| FDS4080N7 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 40V | 13A (Ta) | 10 mOhm @ 13A, 10V | 5V @ 250µA | 40nC @ 10V | 1750pF @ 20V | 3.9W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | |
| BSO065N03MS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 13A (Ta) | 6.5 mOhm @ 16A, 10V | 2V @ 250µA | 40nC @ 10V | 3100pF @ 15V | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| UPA2810T1L-E1-AY | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 30V | 13A (Ta) | 12 mOhm @ 13A, 10V | 2.5V @ 1mA | 40nC @ 10V | 1860pF @ 10V | 1.5W | Surface Mount | 8-VDFN Exposed Pad | |
| UPA2810T1L-E2-AY | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 30V | 13A (Ta) | 12 mOhm @ 13A, 10V | 2.5V @ 1mA | 40nC @ 10V | 1860pF @ 10V | 1.5W | Surface Mount | 8-VDFN Exposed Pad | |
| TK13A60D(STA4,Q,M) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 600V | 13A (Ta) | 430 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | 50W | Through Hole | TO-220-3 Full Pack |
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