| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPC8065-H,LQ(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 13A (Ta) | 11.6 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| NTP13N10 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta) | 165 mOhm @ 6.5A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 64.7W | Through Hole | TO-220-3 | |
| NTB13N10T4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta) | 165 mOhm @ 6.5A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 64.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NTP13N10G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta) | 165 mOhm @ 6.5A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 64.7W | Through Hole | TO-220-3 | |
| NTB13N10 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta) | 165 mOhm @ 6.5A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 64.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NTB13N10G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta) | 165 mOhm @ 6.5A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 64.7W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
© 2016 Copyright
