11A (Ta),Current - Continuous Drain (Id) @ 25°C
1.9W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI7460DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 11A (Ta) 9.6 mOhm @ 18A, 10V 3V @ 250µA 100nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7463DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 11A (Ta) 9.2 mOhm @ 18.6A, 10V 3V @ 250µA 140nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7463DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 11A (Ta) 9.2 mOhm @ 18.6A, 10V 3V @ 250µA 140nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8