11A (Ta),Current - Continuous Drain (Id) @ 25°C
2.5V @ 1mA,Vgs(th) (Max) @ Id
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
RSH110N03TB1 ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 10.7 mOhm @ 11A, 10V 2.5V @ 1mA 17nC @ 5V 1300pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
RSS110N03FU6TB ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 10.7 mOhm @ 11A, 10V 2.5V @ 1mA 17nC @ 5V 1300pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
RSS110N03TB ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 10.7 mOhm @ 11A, 10V 2.5V @ 1mA 17nC @ 5V 1300pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
RRS110N03TB1 ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 12.6 mOhm @ 11A, 10V 2.5V @ 1mA 33nC @ 5V 2000pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
GKI06071 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 60V 11A (Ta) 6 mOhm @ 34A, 10V 2.5V @ 1mA 53.6nC @ 10V 3810pF @ 25V 3.1W Surface Mount 8-TDFN Exposed Pad
TPCP8005-H(TE85L,F TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 12.9 mOhm @ 5.5A, 10V 2.5V @ 1mA 20nC @ 10V 2150pF @ 10V - Surface Mount 8-SMD, Flat Lead
TPC8031-H(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 13.3 mOhm @ 5.5A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TPC8014(TE12L,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 14 mOhm @ 5.5A, 10V 2.5V @ 1mA 39nC @ 10V 1860pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TPC8031-H(TE12LQM) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 13.3 mOhm @ 5.5A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)