| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD10AN06A0_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 10.5 mOhm @ 50A, 10V | 4V @ 250µA | 37nC @ 10V | 1840pF @ 25V | 135W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NVTFS5820NLTWG | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 11.5 mOhm @ 8.7A, 10V | 2.3V @ 250µA | 28nC @ 10V | 1462pF @ 25V | 3.2W | Surface Mount | 8-WDFN Exposed Pad | |
| NVTFS5820NLTAG | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 11.5 mOhm @ 8.7A, 10V | 2.3V @ 250µA | 28nC @ 10V | 1462pF @ 25V | 3.2W | Surface Mount | 8-WDFN Exposed Pad | |
| GKI06071 | SANKEN ELECTRIC CO LTD | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 6 mOhm @ 34A, 10V | 2.5V @ 1mA | 53.6nC @ 10V | 3810pF @ 25V | 3.1W | Surface Mount | 8-TDFN Exposed Pad | |
| SI7460DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 9.6 mOhm @ 18A, 10V | 3V @ 250µA | 100nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 |
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