40V,Drain to Source Voltage (Vdss)
11A (Ta),Current - Continuous Drain (Id) @ 25°C
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDS4675 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 40V 11A (Ta) 13 mOhm @ 11A, 10V 3V @ 250µA 56nC @ 4.5V 4350pF @ 20V 1.2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS4675_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 40V 11A (Ta) 13 mOhm @ 11A, 10V 3V @ 250µA 56nC @ 4.5V 4350pF @ 20V 1.2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS4672A FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 40V 11A (Ta) 13 mOhm @ 11A, 4.5V 2V @ 250µA 49nC @ 4.5V 4766pF @ 20V 1.2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
GKI04076 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 40V 11A (Ta) 8.3 mOhm @ 23.3A, 10V 2.5V @ 350µA 24.9nC @ 10V 1470pF @ 25V 3.1W Surface Mount 8-TDFN Exposed Pad
SI7463DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 11A (Ta) 9.2 mOhm @ 18.6A, 10V 3V @ 250µA 140nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7463DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 11A (Ta) 9.2 mOhm @ 18.6A, 10V 3V @ 250µA 140nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8