11.7A (Tc),Current - Continuous Drain (Id) @ 25°C
26nC @ 5V,Gate Charge (Qg) @ Vgs
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI8429DB-T1-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 11.7A (Tc) 35 mOhm @ 1A, 4.5V 800mV @ 250µA 26nC @ 5V 1640pF @ 4V 6.25W Surface Mount 4-XFBGA, CSPBGA