Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
BSC16DN25NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 250V | 10.9A (Tc) | 165 mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4nC @ 10V | 920pF @ 100V | 62.5W | Surface Mount | 8-PowerTDFN | |
BSZ16DN25NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 250V | 10.9A (Tc) | 165 mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4nC @ 10V | 920pF @ 100V | 62.5W | Surface Mount | 8-PowerTDFN | |
PHU11NQ10T,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 10.9A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 1mA | 14.7nC @ 10V | 360pF @ 25V | 57.7W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB |