10.9A,Current - Continuous Drain (Id) @ 25°C
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PHKD6N02LT,518 NXP SEMICONDUCTORS
2 N-Channel (Dual) 20V 10.9A 20 mOhm @ 3A, 5V 1.5V @ 250µA 15.3nC @ 5V 950pF @ 10V 4.17W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4128DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 10.9A 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4128DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 10.9A 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)