10.8A (Tc),Current - Continuous Drain (Id) @ 25°C
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FCPF11N60NT FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 10.8A (Tc) 299 mOhm @ 5.4A, 10V 4V @ 250µA 35.6nC @ 10V 1505pF @ 100V 32.1W Through Hole TO-220-3 Full Pack
FCP11N60N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 10.8A (Tc) 299 mOhm @ 5.4A, 10V 4V @ 250µA 35.6nC @ 10V 1505pF @ 100V 94W Through Hole TO-220-3
SQ4431EY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 10.8A (Tc) 30 mOhm @ 6A, 10V 2.5V @ 250µA 38nC @ 10V 1210pF @ 25V 6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI8451DB-T2-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 10.8A (Tc) 80 mOhm @ 1A, 4.5V 1V @ 250µA 24nC @ 8V 750pF @ 10V 13W Surface Mount -