10.4A (Ta), 65A (Tc),Current - Continuous Drain (Id) @ 25°C
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTD4860NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 16.5nC @ 4.5V 1308pF @ 12V 1.28W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4860N-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 16.5nC @ 4.5V 1308pF @ 12V 1.28W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
NTD4860N-35G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 16.5nC @ 4.5V 1308pF @ 12V 1.28W Through Hole TO-251-3 Stub Leads, IPak
NTD4860NAT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 16.5nC @ 4.5V 1308pF @ 12V 1.28W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4860NA-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 21.8nC @ 10V 1308pF @ 12V 1.28W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
NTD4860NA-35G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 10.4A (Ta), 65A (Tc) 7.5 mOhm @ 30A, 10V 2.5V @ 250µA 21.8nC @ 10V 1308pF @ 12V 1.28W Through Hole TO-251-3 Stub Leads, IPak