1.8A,Current - Continuous Drain (Id) @ 25°C
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDFME3N311ZT FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 1.8A 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 600mW Surface Mount 6-WDFN Exposed Pad
FDC6506P FAIRCHILD SEMICONDUCTOR CORP
2 P-Channel (Dual) 30V 1.8A 170 mOhm @ 1.8A, 10V 3V @ 250µA 3.5nC @ 10V 190pF @ 15V 700mW Surface Mount SOT-23-6 Thin, TSOT-23-6
PMT200EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 1.8A 235 mOhm @ 1.5A, 10V 2.5V @ 250µA 10nC @ 10V 475pF @ 80V 800mW Surface Mount TO-261-4, TO-261AA
NTLJD4150PTBG ON SEMICONDUCTOR
2 P-Channel (Dual) 30V 1.8A 135 mOhm @ 4A, 10V 2V @ 250µA 4.5nC @ 4.5V 300pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad
IRFR9310TRPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 400V 1.8A 7 Ohm @ 1.1A, 10V 4V @ 250µA 13nC @ 10V 270pF @ 25V 50W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SI7922DN-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 100V 1.8A 195 mOhm @ 2.5A, 10V 3.5V @ 250µA 8nC @ 10V - 1.3W Surface Mount PowerPAK® 1212-8 Dual
SI3911DV-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 1.8A 145 mOhm @ 2.2A, 4.5V 450mV @ 250µA 7.5nC @ 4.5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI7922DN-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 100V 1.8A 195 mOhm @ 2.5A, 10V 3.5V @ 250µA 8nC @ 10V - 1.3W Surface Mount PowerPAK® 1212-8 Dual
SI3993DV-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 30V 1.8A 133 mOhm @ 2.2A, 10V 3V @ 250µA 5nC @ 4.5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3911DV-T1-GE3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 1.8A 145 mOhm @ 2.2A, 4.5V 450mV @ 250µA 7.5nC @ 4.5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)