| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMN10A08DN8TA | DIODES INC | 2 N-Channel (Dual) | 100V | 1.6A | 250 mOhm @ 3.2A, 10V | 2V @ 250µA | 7.7nC @ 10V | 405pF @ 50V | 1.25W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| ZXMN10A08DN8TC | DIODES INC | 2 N-Channel (Dual) | 100V | 1.6A | 250 mOhm @ 3.2A, 10V | 2V @ 250µA | 7.7nC @ 10V | 405pF @ 50V | 1.25W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| FDG316P | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 30V | 1.6A | 190 mOhm @ 1.6A, 10V | 3V @ 250µA | 5nC @ 10V | 165pF @ 15V | 480mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| NTGD3133PT1G | ON SEMICONDUCTOR | 2 P-Channel (Dual) | 20V | 1.6A | 145 mOhm @ 2.2A, 4.5V | 1.4V @ 250µA | 5.5nC @ 4.5V | 400pF @ 10V | 560mW | Surface Mount | SC-74, SOT-457 | |
| CSD25213W10 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 20V | 1.6A | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | 1W | Surface Mount | 4-UFBGA, DSBGA | |
| SI3981DV-T1-GE3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 20V | 1.6A | 185 mOhm @ 1.9A, 4.5V | 1.1V @ 250µA | 5nC @ 4.5V | - | 800mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
| SI3981DV-T1-E3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 20V | 1.6A | 185 mOhm @ 1.9A, 4.5V | 1.1V @ 250µA | 5nC @ 4.5V | - | 800mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |
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