1.2A (Tc),Current - Continuous Drain (Id) @ 25°C
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STU1HN60K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 1.2A (Tc) 8 Ohm @ 600mA, 10V 4.5V @ 50µA 9.5nC @ 10V 140pF @ 50V 27W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
STD1HN60K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 1.2A (Tc) 8 Ohm @ 600mA, 10V 4.5V @ 50µA 9.5nC @ 10V 140pF @ 50V 27W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQD1P50TF FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 500V 1.2A (Tc) 10.5 Ohm @ 600mA, 10V 5V @ 250µA 14nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQD1P50TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 500V 1.2A (Tc) 10.5 Ohm @ 600mA, 10V 5V @ 250µA 14nC @ 10V 350pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQP1N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 1.2A (Tc) 11.5 Ohm @ 600mA, 10V 5V @ 250µA 6nC @ 10V 150pF @ 25V 40W Through Hole TO-220-3
FQB1N60TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 1.2A (Tc) 11.5 Ohm @ 600mA, 10V 5V @ 250µA 6nC @ 10V 150pF @ 25V 3.13W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFIBF20GPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 900V 1.2A (Tc) 8 Ohm @ 720mA, 10V 4V @ 250µA 38nC @ 10V 490pF @ 25V 30W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIBF20G VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 900V 1.2A (Tc) 8 Ohm @ 720mA, 10V 4V @ 250µA 38nC @ 10V 490pF @ 25V 30W Through Hole TO-220-3 Full Pack, Isolated Tab