| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI2337DS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 80V | 1.2A (Ta), 2.2A (Tc) | 270 mOhm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | 500pF @ 40V | 2.5W | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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