| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI2309CDS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 1.2A (Ta), 1.6A (Tc) | 345 mOhm @ 1.25A, 10V | 3V @ 250µA | 4.1nC @ 4.5V | 210pF @ 30V | 1.7W | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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