1.2A (Ta),Current - Continuous Drain (Id) @ 25°C
1.14W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI3440DV-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 1.2A (Ta) 375 mOhm @ 1.5A, 10V 4V @ 250µA 8nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3440DV-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 1.2A (Ta) 375 mOhm @ 1.5A, 10V 4V @ 250µA 8nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)