1.2A (Ta),Current - Continuous Drain (Id) @ 25°C
9.45nC @ 5V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI1051X-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 1.2A (Ta) 122 mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45nC @ 5V 560pF @ 4V 236mW Surface Mount SOT-563, SOT-666
SI1054X-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 1.2A (Ta) 95 mOhm @ 1.32A, 4.5V 1V @ 250µA 9.45nC @ 5V 480pF @ 6V 236mW Surface Mount SOT-563, SOT-666
SI1051X-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 1.2A (Ta) 122 mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45nC @ 5V 560pF @ 4V - Surface Mount SOT-563, SOT-666