30V,Drain to Source Voltage (Vdss)
1.2A (Ta),Current - Continuous Drain (Id) @ 25°C
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRLML2803TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 250 mOhm @ 910mA, 10V 1V @ 250µA 5nC @ 10V 85pF @ 25V 540mW Surface Mount TO-236-3, SC-59, SOT-23-3
NTS4173PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 1.2A (Ta) 150 mOhm @ 1.2A, 10V 1.5V @ 250µA 10.1nC @ 10V 430pF @ 15V 290mW Surface Mount SC-70, SOT-323
NTLUF4189NZTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 200 mOhm @ 1.5A, 4.5V 1.5V @ 250µA 3nC @ 4.5V 95pF @ 15V 500mW Surface Mount 6-UFDFN Exposed Pad
IRLML2803GTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 250 mOhm @ 910mA, 10V 1V @ 250µA 5nC @ 10V 85pF @ 25V 540mW Surface Mount TO-236-3, SC-59, SOT-23-3
IRLML2803TR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 250 mOhm @ 910mA, 10V 1V @ 250µA 5nC @ 10V 85pF @ 25V 540mW Surface Mount TO-236-3, SC-59, SOT-23-3
NTLUF4189NZTBG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 200 mOhm @ 1.5A, 4.5V 1.5V @ 250µA 3nC @ 4.5V 95pF @ 15V 500mW Surface Mount 6-UFDFN Exposed Pad
SI1070X-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 99 mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3nC @ 5V 385pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1070X-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 99 mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3nC @ 5V 385pF @ 15V 236mW Surface Mount SOT-563, SOT-666