| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQU1N50TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 500V | 1.1A (Tc) | 9 Ohm @ 550mA, 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | 2.5W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| FQD1N50TF | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 500V | 1.1A (Tc) | 9 Ohm @ 550mA, 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQD1N50TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 500V | 1.1A (Tc) | 9 Ohm @ 550mA, 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQPF2N40 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 400V | 1.1A (Tc) | 5.8 Ohm @ 550mA, 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | 16W | Through Hole | TO-220-3 Full Pack | |
| IRFL9110PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| IRFD9010PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 50V | 1.1A (Tc) | 500 mOhm @ 580mA, 10V | 4V @ 250µA | 11nC @ 10V | 240pF @ 25V | 1W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFL9110TRPBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| IRFD9010 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 50V | 1.1A (Tc) | 500 mOhm @ 580mA, 10V | 4V @ 250µA | 11nC @ 10V | 240pF @ 25V | 1W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFL9110 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| IRFL9110TR | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA |
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