| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDC2612 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 1.1A | 725 mOhm @ 1.1A, 10V | 4.5V @ 250µA | 11nC @ 10V | 234pF @ 100V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| BSP296 L6433 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 1.1A | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 1.79W | Surface Mount | TO-261-4, TO-261AA | |
| NTLUD3191PZTBG | ON SEMICONDUCTOR | 2 P-Channel (Dual) | 20V | 1.1A | 250 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 3.5nC @ 4.5V | 160pF @ 10V | 500mW | Surface Mount | 6-UFDFN Exposed Pad | |
| NTLUD3191PZTAG | ON SEMICONDUCTOR | 2 P-Channel (Dual) | 20V | 1.1A | 250 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 3.5nC @ 4.5V | 160pF @ 10V | 500mW | Surface Mount | 6-UFDFN Exposed Pad | |
| NTMD6601NR2G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 80V | 1.1A | 215 mOhm @ 2.2A, 10V | 3V @ 250µA | 15nC @ 10V | 400pF @ 25V | 600mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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