1.18A (Ta),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI1065X-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 1.18A (Ta) 130 mOhm @ 1.18A, 4.5V 950mV @ 250µA 10.8nC @ 5V 480pF @ 6V 236mW Surface Mount SOT-563, SOT-666
SI1065X-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 1.18A (Ta) 130 mOhm @ 1.18A, 4.5V 950mV @ 250µA 10.8nC @ 5V 480pF @ 6V 236mW Surface Mount SOT-563, SOT-666