8V,Drain to Source Voltage (Vdss)
1.25W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2305DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 3.5A (Ta) 52 mOhm @ 3.5A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1245pF @ 4V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3
SI2329DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 5.3A (Ta) 30 mOhm @ 5.3A, 4.5V 800mV @ 250µA 29nC @ 4.5V 1485pF @ 4V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3
SI2305DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 3.5A (Ta) 52 mOhm @ 3.5A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1245pF @ 4V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3