8V,Drain to Source Voltage (Vdss)
40nC @ 4.5V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI8424CDB-T1-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 6.3A (Ta), 10A (Tc) 20 mOhm @ 2A, 4.5V 800mV @ 250µA 40nC @ 4.5V 2340pF @ 4V 1.1W Surface Mount 4-UFBGA, WLCSP
SI6469DQ-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 6A (Ta) 28 mOhm @ 6A, 4.5V 450mV @ 250µA 40nC @ 4.5V - - Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6469DQ-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 6A (Ta) 28 mOhm @ 6A, 4.5V 450mV @ 250µA 40nC @ 4.5V - - Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6967DQ-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 8V - 30 mOhm @ 5A, 4.5V 450mV @ 250µA 40nC @ 4.5V - - Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6967DQ-T1-GE3 VISHAY SILICONIX
2 P-Channel (Dual) 8V - 30 mOhm @ 5A, 4.5V 450mV @ 250µA 40nC @ 4.5V - - Surface Mount 8-TSSOP (0.173", 4.40mm Width)