8V,Drain to Source Voltage (Vdss)
12nC @ 4.5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2311DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 3A (Ta) 45 mOhm @ 3.5A, 4.5V 800mV @ 250µA 12nC @ 4.5V 970pF @ 4V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2311DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 3A (Ta) 45 mOhm @ 3.5A, 4.5V 800mV @ 250µA 12nC @ 4.5V 970pF @ 4V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3