8V,Drain to Source Voltage (Vdss)
700mV @ 250µA,Vgs(th) (Max) @ Id
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTS2101PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 1.4A (Ta) 100 mOhm @ 1A, 4.5V 700mV @ 250µA 6.4nC @ 5V 640pF @ 8V 290mW Surface Mount SC-70, SOT-323
AOC2421 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 8V 2.5A (Ta) 62 mOhm @ 1.5A, 2.5V 700mV @ 250µA 13nC @ 4.5V 752pF @ 4V 600mW Surface Mount 4-XFBGA, CSPBGA
NTS2101PT1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 1.4A (Ta) 100 mOhm @ 1A, 4.5V 700mV @ 250µA 6.4nC @ 5V 640pF @ 8V 290mW Surface Mount SC-70, SOT-323
SI8466EDB-T2-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 3.6A (Ta) 43 mOhm @ 2A, 4.5V 700mV @ 250µA 13nC @ 4.5V 710pF @ 4V 780mW Surface Mount 4-UFBGA, WLCSP
SI1489EDH-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 2A (Ta) - 700mV @ 250µA 16nC @ 4.5V - 1.56W Surface Mount 6-TSSOP, SC-88, SOT-363
SI8805EDB-T2-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 2.2A (Ta) 68 mOhm @ 1.5A, 4.5V 700mV @ 250µA 10nC @ 4.5V - 500mW Surface Mount 4-XFBGA
SIB437EDKT-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 7.5A (Ta) 34 mOhm @ 3A, 4.5V 700mV @ 250µA 16nC @ 4.5V - 2.4W Surface Mount PowerPAK® TSC-75-6
SI8802DB-T2-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 3A (Ta) 54 mOhm @ 1A, 4.5V 700mV @ 250µA 6.5nC @ 4.5V - - Surface Mount 4-XFBGA
SIA920DJ-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 8V 4.5A (Ta) 27 mOhm @ 5.3A, 4.5V 700mV @ 250µA 7.5nC @ 4V 470pF @ 4V 1.9W Surface Mount PowerPAK® SC-70-6 Dual