8V,Drain to Source Voltage (Vdss)
52 mOhm @ 3.5A, 4.5V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTR2101PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 3.7A 52 mOhm @ 3.5A, 4.5V 1V @ 250µA 15nC @ 4.5V 1173pF @ 4V 960mW Surface Mount TO-236-3, SC-59, SOT-23-3
NTR2101PT1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V - 52 mOhm @ 3.5A, 4.5V 1V @ 250µA 15nC @ 4.5V 1173pF @ 4V 960mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2305DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 3.5A (Ta) 52 mOhm @ 3.5A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1245pF @ 4V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3
SI2305DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 3.5A (Ta) 52 mOhm @ 3.5A, 4.5V 800mV @ 250µA 15nC @ 4.5V 1245pF @ 4V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3