NTR2101PT1G |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
8V
|
3.7A
|
52 mOhm @ 3.5A, 4.5V
|
1V @ 250µA
|
15nC @ 4.5V
|
1173pF @ 4V
|
960mW
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|
NTR2101PT1 |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
8V
|
-
|
52 mOhm @ 3.5A, 4.5V
|
1V @ 250µA
|
15nC @ 4.5V
|
1173pF @ 4V
|
960mW
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|
SI2305DS-T1-E3 |
VISHAY SILICONIX |
|
MOSFET P-Channel, Metal Oxide
|
8V
|
3.5A (Ta)
|
52 mOhm @ 3.5A, 4.5V
|
800mV @ 250µA
|
15nC @ 4.5V
|
1245pF @ 4V
|
1.25W
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|
SI2305DS-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET P-Channel, Metal Oxide
|
8V
|
3.5A (Ta)
|
52 mOhm @ 3.5A, 4.5V
|
800mV @ 250µA
|
15nC @ 4.5V
|
1245pF @ 4V
|
1.25W
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|