85V,Drain to Source Voltage (Vdss)
180nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTP96P085T IXYS CORP
MOSFET P-Channel, Metal Oxide 85V 96A (Tc) 13 mOhm @ 48A, 10V 4V @ 250µA 180nC @ 10V 13100pF @ 25V 298W Through Hole TO-220-3
IXTA96P085T IXYS CORP
MOSFET P-Channel, Metal Oxide 85V 96A (Tc) 13 mOhm @ 500mA, 10V 4V @ 250µA 180nC @ 10V 13100pF @ 25V 298W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTH96P085T IXYS CORP
MOSFET P-Channel, Metal Oxide 85V 96A (Tc) 13 mOhm @ 500mA, 10V 4V @ 250µA 180nC @ 10V 13100pF @ 25V 298W Through Hole TO-247-3
IPP054NE8N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 85V 100A (Tc) 5.4 mOhm @ 100A, 10V 4V @ 250µA 180nC @ 10V 12100pF @ 40V 300W Through Hole TO-220-3
IXTA96P085TTRL IXYS CORP
MOSFET P-Channel, Metal Oxide 85V 96A 13 mOhm @ 48A, 10V 4V @ 250µA 180nC @ 10V 13100pF @ 25V 298W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFH80N085 IXYS CORP
MOSFET N-Channel, Metal Oxide 85V 80A (Tc) 9 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 300W Through Hole TO-247-3
IXFT80N085 IXYS CORP
MOSFET N-Channel, Metal Oxide 85V 80A (Tc) 9 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 300W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFC80N085 IXYS CORP
MOSFET N-Channel, Metal Oxide 85V 80A (Tc) 11 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 230W Through Hole -